GT Advanced Technologies’ silicon carbide material will help accelerate the next generation of power electronics and quicken the adoption of new applications such as EV, Photovoltaics, 5G, IoT, and data centers. Any ‘power electronics’ application will typically demand circuits capable of handling high power and high temperature while being very small and lightweight. This is the fundamental advantage of SiC over Si.

  • Tier 1 quality 6-inch (150 mm) crystal with fewer than 0.5 micropipes per sq. cm and a target usable height of better than 25 mm
  • Crystal experts, precision equipment design and control, and proven supply chain result in fast capacity expansion and lower costs
  • Guaranteed supply options

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