The GT Advanced Technologies’ CCz feeder technology converts a traditional Cz crystal puller
to an advanced continuous Cz puller enabling higher throughput, higher yield and lower
cost production of monocrystalline ingots with low segregation coefficient dopants (gallium,
phosphorus, etc). Solar cells fabricated on boron-doped p-type mono silicon wafers suffer
high light-induced degradation (LID) and the output power loss becomes more severe for
advanced, high-efficiency solar cells such as PERC. Replacing boron by gallium can solve the
LID issue from the material level eliminating any long-term concern for power loss.
Here are the benefits of converting to CCz: State-of-the-art pullers with multiple pulls can achieve a throughput increase of 15%, a crystal yield increase of at least 10%, and an operating cost decrease of 15%. Furthermore, CCz technology can support increasing ingot length without the need to increase crucible and hot zone size. This accelerates cost reduction for mono-Si wafers. The tunable ingot resistivity target and the extreme uniform distribution also increase average cell efficiency. This reduces the need to tune the cell process for different resistivity and cell binning for the module production.