High quality HEM® Ti:Sapphire laser crystals begin with perfect crystalline structure and the correct 3+ valance electron state. We ensure these requirements through our multiple-stage, rigorous inspection process, using state-of-the-art test and measurement equipment. We test our rods for absorption values, homogeneity, light scatter, FOM, flatness, and transmitted wave fronts. Each HEM® Ti:Sapphire laser rod is examined and verified utilizing advanced equipment and expert laser technicians. Total focus on quality and accuracy guarantees that our laser crystals dimensions, surfaces and crystalline structure provide the foundation for your laser platform’s high power levels and excellent beam profiles.
HEM® Ti:sapphire’s wide emission range, (650 nm to 1200 nm), high-power density pumping capability along with excellent thermal properties enable today’s high-intensity laser platforms. These facilities are creating the next generation of laser-based applications such as proton therapy, accelerator physics, nuclear physics, far-field physics, infrared spectroscopy and materials characterization. GTAT works closely with its customers to develop new crystal designs so that the ultrafast laser community can continue to advance the reliability and performance of their products.