Highly scalable US plant will meet growing demand for high quality SiC material

GTAT Corporation (GTAT) opened its new state-of-the-art SiC manufacturing plant with a ribbon-cutting ceremony that included state and local officials who were on hand to commemorate the event.

The facility, located in Hudson, New Hampshire, US also includes the company’s new corporate headquarters as well as its advanced research and development centre.

“The opening of our new SiC production facility represents a significant milestone for the company’s transition from an equipment provider to a materials company,” said Greg Knight, GTAT’s president and chief executive officer.

Read the article on compoundsemiconductor.net

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