GT develops first silicon carbide sublimation furnace.
Introduces DSS silicon crystal growth furnace (today, over 3800 DSS units supplied to the market)
Introduces SDR (today, over 400 units supplied to the market, about 1/3rd of the global polysilicon comes from GT’s CVD's)
Hydrochlorination technology package introduced (today ~1/2 of the global polysilicon produced is made from GT’s technology).
GT enters optical sapphire market.
GT achieves success in producing 4-inch SiC boules
Develops gen 2 SiClone™ silicon carbide furnace.
Achieves repeatable process for producing 6-inch SiC boules.
GTAT opens new silicon carbide facility for 6-inch (150mm) boules and pivots from equipment to advanced materials.
Introduces 6-inch (150mm) CrystX® silicon carbide.
GTAT signs a long-term supply agreement with Global Wafers Co. of Taiwan for CrystX® silicon carbide.
GTAT is ISO 9001:2015 certified with TÜV Rheinland of North America.
GTAT signs long-term supply agreements with ON Semiconductor and Infineon for CrystX® silicon carbide.
We are building a high performing team with the drive and passion to develop a new generation of products for the growing global solar, power electronics and photonics markets.